SiC MOSFET modelling and degradation characterization via impedance monitoring

Apr 20, 2026 | conference

First results on power ๐—ฆ๐—ถ๐—– ๐— ๐—ข๐—ฆ๐—™๐—˜๐—ง ๐—บ๐—ผ๐—ฑ๐—ฒ๐—น๐—น๐—ถ๐—ป๐—ด ๐—ฎ๐—ป๐—ฑ ๐—ฑ๐—ฒ๐—ด๐—ฟ๐—ฎ๐—ฑ๐—ฎ๐˜๐—ถ๐—ผ๐—ป ๐—ฐ๐—ต๐—ฎ๐—ฟ๐—ฎ๐—ฐ๐˜๐—ฒ๐—ฟ๐—ถ๐˜€๐—ฎ๐˜๐—ถ๐—ผ๐—ป ๐˜ƒ๐—ถ๐—ฎ ๐—ถ๐—บ๐—ฝ๐—ฒ๐—ฑ๐—ฎ๐—ป๐—ฐ๐—ฒ ๐—บ๐—ผ๐—ป๐—ถ๐˜๐—ผ๐—ฟ๐—ถ๐—ป๐—ด were showcased by the SAFEPOWER partner ๐—˜๐—ณ๐—ณ๐—ถ๐—ฐ๐—ถ๐—ฒ๐—ป๐—ฐ๐˜† ๐—ผ๐—ณ ๐—˜๐—น๐—ฒ๐—ฐ๐˜๐—ฟ๐—ถ๐—ฐ๐—ฎ๐—น ๐—˜๐—ป๐—ฒ๐—ฟ๐—ด๐˜† ๐—–๐—ผ๐—ป๐˜ƒ๐—ฒ๐—ฟ๐˜€๐—ถ๐—ผ๐—ป ๐—ฆ๐˜†๐˜€๐˜๐—ฒ๐—บ ๐—ฒโ€‘๐—”๐—–๐—˜ยฒ (Universitรฉ de Technologie Tarbes Occitanie Pyrรฉnรฉes – UTTOP) during the ๐—œ๐—ป๐˜๐—ฒ๐—ฟ๐—ป๐—ฎ๐˜๐—ถ๐—ผ๐—ป๐—ฎ๐—น ๐—–๐—ผ๐—น๐—น๐—ผ๐—พ๐˜‚๐—ถ๐˜‚๐—บ ๐—ฎ๐—ป๐—ฑ ๐—˜๐˜…๐—ต๐—ถ๐—ฏ๐—ถ๐˜๐—ถ๐—ผ๐—ป ๐—ผ๐—ป ๐—˜๐—น๐—ฒ๐—ฐ๐˜๐—ฟ๐—ผ๐—บ๐—ฎ๐—ด๐—ป๐—ฒ๐˜๐—ถ๐—ฐ ๐—–๐—ผ๐—บ๐—ฝ๐—ฎ๐˜๐—ถ๐—ฏ๐—ถ๐—น๐—ถ๐˜๐˜†.

Two are part of the work achieved by UTTOP within the SAFEPOWER project.

Check the post of our partners for more info: https://www.linkedin.com/feed/update/urn:li:activity:7450897152953913344/

Congratulations!

Please follow us on:

You may also like...