Planar and Trench SiC MOSFET devices
We are proud to announce that the SAFEPOWER team has submitted two deliverables related to work on cost-efficient, sustainable high-voltage SiC devices for Medium Voltage Direct Current converters.
Deliverables D4.1 and D4.2 mark important progress in developing our next-generation Power Devices.
โก๏ธ๐๐ฐ.๐ญ โ ๐๐บ๐ฝ๐ฟ๐ผ๐๐ฒ๐ฑ ๐๐ฎ๐ฏ๐ฟ๐ถ๐ฐ๐ฎ๐๐ถ๐ผ๐ป ๐ฃ๐ฟ๐ผ๐ฐ๐ฒ๐๐๐ฒ๐
๐๐ฅ๐ช๐ต๐ฐ๐ณ ๐๐ฆ๐ข๐ฅ๐ฆ๐ณ: Institute of Microelectronics of Barcelona (IMB-CNM, CSIC)
D4.1 explains how we improved the manufacturing processes for planar and trench SiC MOSFET devices.
The deliverable shows:
โข expected benefits in performance, yield, and reliability.
โข simulation results that confirm the improvements,
โข better process methods,
These upgrades make the technology easier to scale for industrial production.
โก๏ธ๐๐ฐ.๐ฎ โ ๐๐ฒ๐๐๐ฒ๐ฟ, ๐ ๐ผ๐ฟ๐ฒ ๐๐ณ๐ณ๐ถ๐ฐ๐ถ๐ฒ๐ป๐ ๐๐ฑ๐ด๐ฒ ๐ง๐ฒ๐ฟ๐บ๐ถ๐ป๐ฎ๐๐ถ๐ผ๐ป ๐๐ฒ๐๐ถ๐ด๐ป๐
๐๐ฅ๐ช๐ต๐ฐ๐ณ ๐๐ฆ๐ข๐ฅ๐ฆ๐ณ: Swansea University / Prifysgol Abertawe
D4.2 focuses on improving edge terminationโa key feature that protects devices and ensures stable operation.
The work provides:
โข simpler processes that reduce manufacturing effort.
โข new and refined design options,
The result is a more robust and cost-efficient design for both planar and trench technologies.
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