High-quality Ga₂O₃ thin films pave the way for efficient, next-generation energy solutions.
Our colleagues from the Groupe d’Étude de la Matière Condensée (GEMaC UVSQ-CNRS) presented at the GDR MATEPI Conference in Lille (3-6 November, 2025) a poster related to their work, realised within the work package 5: β-Ga2O3 Devices Optimised with Advanced Concepts/Materials for MVDC Converters
They have successfully grown ultra-thin layers of gallium oxide (Ga₂O₃) on different crystal orientations using advanced vapour-phase techniques. These films, known for their wide bandgap, are key to developing more efficient and reliable power electronics for applications such as renewable energy and electric vehicles.
The study achieved high-quality growth with minimal defects and explored how temperature and gas flow affect the process. These results contribute to the development of wide-bandgap semiconductors for high-performance power electronics, supported by the European HORIZON SAFEPOWER project.
Open the link to visualise the poster:
Study of Ga2O3 thin films homoepitaxially grown on (010), (-201), and (001) substrates.
