Advances in #Ga2O3 technology

📌From September 22 to 24, members of the 𝗦𝗔𝗙𝗘𝗣𝗢𝗪𝗘𝗥 𝗽𝗿𝗼𝗷𝗲𝗰𝘁 𝘁𝗲𝗮𝗺 — Amador Perez Tomas📷(IMB-CNM-CSIC, Spain), Fernando-Pierre G.📷 (IMB-CNM-CSIC, Spain), Aniol Vellvehí i Llovet (IMB-CNM-CSIC, Spain), Ekaterine Chikoidze📷 (GEMaC, UVSQ – CNRS, France) and Edgars Butanovs (ISSP, Latvia)
— took part in the 𝟴𝘁𝗵 𝗜𝗻𝘁𝗲𝗿𝗻𝗮𝘁𝗶𝗼𝗻𝗮𝗹 𝗪𝗼𝗿𝗸𝘀𝗵𝗼𝗽 𝗼𝗻 𝗨𝗹𝘁𝗿𝗮-𝗪𝗶𝗱𝗲 𝗕𝗮𝗻𝗱𝗴𝗮𝗽 𝗠𝗮𝘁𝗲𝗿𝗶𝗮𝗹𝘀 𝗮𝗻𝗱 𝗗𝗲𝘃𝗶𝗰𝗲𝘀 (#IWUMD2025), held in Wroclaw, Poland.

Amador Perez Tomas presented the work “𝗧𝘂𝗻𝗶𝗻𝗴 𝗦𝗶𝗹𝗶𝗰𝗼𝗻 𝗜𝗺𝗽𝗹𝗮𝗻𝘁𝗮𝘁𝗶𝗼𝗻 𝗳𝗼𝗿 α-𝗚𝗮₂𝗢₃ 𝗮𝗻𝗱 β-𝗚𝗮₂𝗢₃ 𝗠𝗘𝗦𝗙𝗘𝗧 𝗧𝗿𝗮𝗻𝘀𝗶𝘀𝘁𝗼𝗿𝘀”, coauthored by all the participated team members. Special mention👏 for Edgars Butanovs (ISSP, Latvia) – the samples grower.

• The article focuses on the 𝗱𝗲𝘃𝗲𝗹𝗼𝗽𝗺𝗲𝗻𝘁 𝗼𝗳 𝗦𝗶-𝗱𝗼𝗽𝗲𝗱 α-𝗚𝗮₂𝗢₃ layers using an ALD Al₂O₃ capping method.
• This technique allows 𝗵𝗶𝗴𝗵-𝘁𝗲𝗺𝗽𝗲𝗿𝗮𝘁𝘂𝗿𝗲 𝗮𝗻𝗻𝗲𝗮𝗹𝗶𝗻𝗴 compatible with β-Ga₂O₃ processing, aiming to 𝗮𝗰𝘁𝗶𝘃𝗮𝘁𝗲 𝗱𝗼𝗽𝗶𝗻𝗴 𝗲𝗳𝗳𝗶𝗰𝗶𝗲𝗻𝘁𝗹𝘆 𝗶𝗻 𝗯𝗼𝘁𝗵 𝗽𝗵𝗮𝘀𝗲𝘀.
• The study addresses key aspects such as 𝗱𝗿𝗶𝗳𝘁 𝗰𝗼𝗻𝗱𝘂𝗰𝘁𝗶𝘃𝗶𝘁𝘆, 𝗢𝗵𝗺𝗶𝗰 𝗰𝗼𝗻𝘁𝗮𝗰𝘁 𝗳𝗼𝗿𝗺𝗮𝘁𝗶𝗼𝗻, and 𝗱𝗼𝗽𝗮𝗻𝘁 𝗮𝗰𝘁𝗶𝘃𝗮𝘁𝗶𝗼𝗻, and highlights the 𝗽𝗼𝘁𝗲𝗻𝘁𝗶𝗮𝗹 𝗼𝗳 α-𝗚𝗮₂𝗢₃ for future high-voltage and UV optoelectronic devices.

Congratulation